Bakeng sa li-optoelectronics tse thehiloeng ho silicon, li-photodetectors tsa silicon
Li-photodetectorsfetola lipontšo tsa leseli ka lipontšo tsa motlakase, 'me ha litekanyetso tsa ho fetisa lintlha li ntse li tsoela pele ho ntlafala, li-photodetectors tse lebelo le phahameng tse kopantsoeng le li-platform tsa optoelectronics tse thehiloeng ho silicon li fetohile tsa bohlokoa ho litsi tsa data tsa moloko o latelang le marang-rang a puisano. Sengoliloeng sena se tla fana ka kakaretso ea li-photodetector tsa lebelo le holimo, tse tobokelitsoeng ho silicon based germanium (Ge kapa Si photodetector)li-photodetectors tsa siliconbakeng sa theknoloji e kopaneng ea optoelectronics.
Germanium ke sesebelisoa se khahlang bakeng sa ho bona lebone la infrared haufi le sethala sa silicon hobane se tsamaisana le lits'ebetso tsa CMOS 'me se monya ka matla ho maqhubu a maqhubu a mehala. Sebopeho se tloaelehileng haholo sa Ge/Si photodetector ke pin diode, moo germanium e ka hare e leng teng pakeng tsa libaka tsa mofuta oa P le N-mofuta.
Sebopeho sa sesebelisoa Setšoantšo sa 1 se bonts'a pini e tloaelehileng e otlolohileng Ge kapaKe photodetectorsebopeho:
Likarolo tse kholo li kenyelletsa: lera le monyang germanium le hōlileng holim'a silicon substrate; E sebelisetsoa ho bokella mabitso a p le n ea bajari ba tefiso; Khokahano ea Waveguide bakeng sa ho monya leseli hantle.
Khōlo ea Epitaxial: Ho hola germanium ea boleng bo holimo ho silicon ho thata ka lebaka la 4.2% e sa lumellaneng ea lattice lipakeng tsa lisebelisoa tse peli. Hangata ho sebelisoa mehato e 'meli ea ho hola: mocheso o tlase (300-400°C) kholo ea lera la buffer le mocheso o phahameng (ka holimo ho 600°C) ho beha germanium. Mokhoa ona o thusa ho laola ho kheloha ha likhoele ho bakoang ke ho se lumellane ha li-lattice. Ka mor'a kholo annealing ho 800-900 ° C ho feta ho fokotsa khoele dislocation density hoo e ka bang 10^7 cm^ -2. Litšobotsi tsa ts'ebetso: Ge / Si PIN photodetector e tsoetseng pele ka ho fetisisa e ka finyella: ho arabela,> 0.8A / W ho 1550 nm; Bophahamo ba motlakase,> 60 GHz; Lefifi la hajoale, <1 μA ho -1 V leeme.
Ho kopanya le li-platform tsa silicon-based optoelectronics
Kopanyo eali-photodetectors tsa lebelo le holimoka li-platform tsa optoelectronics tse thehiloeng ho silicon li nolofalletsa li-transceivers tsa optical tse tsoetseng pele le li-interconnect. Mekhoa e 'meli e meholo ea ho kopanya ke e latelang: Ho kopanya ka pele-pele (FEOL), moo photodetector le transistor li entsoeng ka nako e le' ngoe holim'a substrate ea silicon e lumellang ho sebetsana le mocheso o phahameng, empa ho nka sebaka sa chip. Khokahano ea morao-rao (BEOL). Li-photodetectors li etsoa ka holim'a tšepe ho qoba ho kena-kenana le CMOS, empa li lekanyelitsoe ho fokotsa mocheso oa ho sebetsa.
Setšoantšo sa 2: Karabelo le bandwidth ea Ge/Si photodetector ea lebelo le holimo
Sesebelisoa sa setsi sa data
Li-photodetectors tsa lebelo le phahameng ke karolo ea bohlokoa molokong o latelang oa khokahanyo ea setsi sa data. Lisebelisoa tse ka sehloohong li kenyelletsa: li-transceivers optical : 100G, 400G le litekanyetso tse phahameng, ho sebelisa PAM-4 modulation; Adetector e phahameng ea bandwidth(> 50 GHz) ea hlokahala.
Silicon-based optoelectronic integrated circuit: ho kopanya monolithic ea detector le modulator le likarolo tse ling; Enjine ea optical e sebetsang ka thata, e sebetsang hantle haholo.
Mehaho e ajoang: khokahano ea optical lipakeng tsa komporo e arotsoeng, polokelo le polokelo; Ho tsamaisa tlhokahalo ea li-photodetectors tse baballang matla, tse phahameng haholo.
Pono ea bokamoso
Bokamoso ba li-photodetectors tse phahameng tsa optoelectronic tse kopantsoeng li tla bontša mekhoa e latelang:
Litefiso tse phahameng tsa data: Ho khanna nts'etsopele ea li-transceivers tsa 800G le 1.6T; Ho hlokahala li-photodetectors tse nang le li-bandwidth tse fetang 100 GHz.
Khokahano e ntlafetseng: Ho kopanngoa ha chip e le 'ngoe ea thepa ea III-V le silicon; Theknoloji e tsoetseng pele ea ho kopanya 3D.
Lisebelisoa tse ncha: Ho hlahloba lisebelisoa tsa mahlakore a mabeli (tse kang graphene) bakeng sa ho lemoha khanya ea ultrafast; Alloy e ncha ea Group IV bakeng sa tšireletso e atolositsoeng ea wavelength.
Lisebelisoa tse hlahang: LiDAR le lits'ebetso tse ling tsa kutlo li khanna nts'etsopele ea APD; Lisebelisoa tsa microwave photon tse hlokang li-photodetectors tse phahameng tsa linearity.
Li-photodetectors tsa lebelo le phahameng, haholo-holo Ge kapa Si photodetectors, li fetohile mokhanni oa bohlokoa oa li-optoelectronics tse thehiloeng ho silicon le meloko e latelang ea puisano ea optical. Tsoelo-pele e tsoelang pele ea thepa, moralo oa lisebelisoa, le mahlale a ho kopanya li bohlokoa ho fihlela litlhoko tse ntseng li hola tsa bandwidth ea litsi tsa data tsa nako e tlang le marang-rang a likhokahano. Ha tšimo e ntse e tsoela pele ho fetoha, re ka lebella ho bona li-photodetectors tse nang le li-bandwidth tse phahameng, lerata le tlaase, le ho kopanya ka mokhoa o se nang moeli le li-circuits tsa elektroniki le tsa photonic.
Nako ea poso: Jan-20-2025