Sesebeletsi sa foto sa infrared se sebetsang hantle haholo

Boikemisetso bo phahameng ba ho sebetsa ka bowenasesebelisoa sa infrared photodetector

 

infraredphotodetectore na le litšoaneleho tsa bokhoni bo matla ba ho thibela tšitiso, bokhoni bo matla ba ho lemoha sepheo, ts'ebetso ea boemo bohle ba leholimo le ho ipata hamonate. E bapala karolo ea bohlokoa haholoanyane mafapheng a kang bongaka, sesole, theknoloji ea sebaka le boenjiniere ba tikoloho. Har'a bona, ba itaolangho lemoha ha photoelectricchip e ka sebetsang ka boithaopo ntle le motlakase o eketsehileng oa kantle e hohetse tlhokomelo e kholo tšimong ea ho lemoha ha infrared ka lebaka la ts'ebetso ea eona e ikhethang (e kang ho ikemela ha matla, kutloisiso e phahameng le botsitso, joalo-joalo). Ka lehlakoreng le leng, li-chips tsa setso tsa ho bona motlakase, joalo ka silicon-based kapa narrowbandgap semiconductor-based infrared chips, ha li hloke feela li-voltages tse eketsehileng tsa leeme ho khanna karohano ea bajari ba lifoto ho hlahisa li-photocurrents, empa hape li hloka lisebelisoa tse eketsehileng tsa ho pholisa ho fokotsa lerata le futhumatsang le ho ntlafatsa karabelo. Ka hona, ho se ho le thata ho finyella likhopolo tse ncha le litlhoko tsa moloko o latelang oa lisebelisoa tsa ho lemoha li-infrared nakong e tlang, tse kang tšebeliso e tlaase ea matla, boholo bo fokolang, theko e tlaase le ts'ebetso e phahameng.

 

Haufinyane tjena, lihlopha tsa liphuputso tse tsoang Chaena le Sweden li hlahisitse mochine o mocha oa pin heterojunction self-driven short-wave infrared (SWIR) photoelectric chip e thehiloeng ho lifilimi tsa graphene nanoribbon (GNR)/alumina/silicone e le 'ngoe ea kristale. Tlas'a phello e kopantsoeng ea phello ea optical gating e hlahisitsoeng ke sebopeho se fapaneng le sebaka sa motlakase se hahiloeng, chip e bontšitse karabelo e phahameng haholo le ts'ebetso ea ho lemoha ho zero bias voltage. The photoelectric discovery chip e na le A response rate e ka holimo ho 75.3 A/W ka mokhoa oa boithaopo, sekhahla sa ho lemoha ke 7.5 × 10¹⁴ Jones, le ts'ebetso e ntle ea bokantle e haufi le 104%, e ntlafatsang ts'ebetso ea ho lemoha ha mofuta o tšoanang oa lichipisi tse thehiloeng ka silicon ka rekoto ea liodara tse 7 tsa boholo. Ho phaella moo, tlas'a mokhoa o tloaelehileng oa ho khanna, sekhahla sa karabo ea chip, sekhahla sa ho lemoha, le katleho ea ka ntle ea quantum kaofela li phahametse 843 A/W, 10¹⁵ Jones, le 105% ka ho latellana, tseo kaofela e leng litekanyetso tse phahameng ka ho fetisisa tse tlalehiloeng lipatlisisong tsa morao-rao. Ho sa le joalo, phuputso ena e boetse e bonts'a ts'ebeliso ea lefats'e ea 'nete ea chip ea ho lemoha photoelectric masimong a puisano ea optical le imaging infrared, e totobatsang bokhoni ba eona bo boholo ba ts'ebeliso.

 

E le hore u ithute ka mokhoa o hlophisitsoeng ts'ebetso ea photoelectric ea photodetector e thehiloeng ho graphene nanoribbons /Al₂O₃/ silicon e le' ngoe ea kristale, bafuputsi ba ile ba lekoa static (current-voltage curve) le likarabo tse matla tsa sebopeho (curve ea nako ea hona joale). Ho lekola ka mokhoa o hlophisehileng litšobotsi tsa karabelo ea graphene nanoribbon /Al₂O₃/ monocrystalline silicon heterostructure photodetector tlas'a li-voltages tse fapaneng tsa bias, bafuputsi ba ile ba lekanya karabelo ea hajoale ea sesebelisoa ho 0 V, -1 V, -3 V le -5 V biases, ka matla a optical density ea μ.15 ² W8cm. Photocurrent e eketseha ka leeme la morao 'me e bonts'a lebelo la karabo e potlakileng maemong ohle a leeme.

 

Qetellong, bafuputsi ba ile ba etsa mokhoa oa ho etsa litšoantšo 'me ba atleha ho finyella setšoantšo se ikemetseng sa maqhubu a nakoana a infrared. Sistimi e sebetsa tlasa leeme la zero mme ha e na tšebeliso ea matla ho hang. Bokhoni ba ho nka litšoantšo ba photodetector bo ile ba hlahlojoa ho sebelisoa mask a matšo ka mokhoa oa lengolo "T" (joalokaha ho bontšitsoe setšoantšong sa 1).

Qetellong, phuputso ena e atlehile ho iketsetsa li-photodetectors tse ikemetseng tse itšetlehileng ka graphene nanoribbons 'me li fihletse tekanyo e phahameng ea ho arabela. Ho sa le joalo, bafuputsi ba atlehile ho bonts'a puisano ea optical le bokhoni ba ho nahana ka senaphotodetector e arabelang haholo. Katleho ena ea lipatlisiso ha e fane feela ka mokhoa o sebetsang bakeng sa nts'etsopele ea li-graphene nanoribbons le lisebelisoa tsa optoelectronic tse thehiloeng ho silicon, empa hape e bonts'a ts'ebetso ea bona e ntle haholo e le li-photodetectors tsa infrared infrared.


Nako ea poso: Apr-28-2025